ER1G vs FES1GWTGHE3TRTB feature comparison

ER1G Galaxy Microelectronics

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FES1GWTGHE3TRTB Fagor Electrónica

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD FAGOR ELECTRONICA S COOP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.3 V
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Recovery Time-Max 0.035 µs 0.035 µs
Surface Mount YES YES
Base Number Matches 18 1
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
Diode Element Material SILICON
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reference Standard AEC-Q101
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40

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