ER1B vs ES1BFSHM3G feature comparison

ER1B Galaxy Semi-Conductor Co Ltd

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ES1BFSHM3G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 0.95 V
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-F2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.035 µs 0.035 µs
Surface Mount YES YES
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Base Number Matches 18 1
HTS Code 8541.10.00.80
Date Of Intro 2020-06-05
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
Application EFFICIENCY
Diode Element Material SILICON
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101
Reverse Current-Max 1 µA
Terminal Finish MATTE TIN

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