ER100S vs 1SS307TE85R feature comparison

ER100S Galaxy Semi-Conductor Co Ltd

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1SS307TE85R Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TOSHIBA CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 1.3 V
Non-rep Pk Forward Current-Max 30 A 1 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 125 °C
Output Current-Max 1 A 0.1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V
Reverse Recovery Time-Max 0.035 µs
Surface Mount NO YES
Base Number Matches 4 1
HTS Code 8541.10.00.70
Diode Element Material SILICON
JESD-30 Code R-PDSO-G3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 0.15 W
Qualification Status Not Qualified
Reverse Current-Max 0.01 µA
Terminal Form GULL WING
Terminal Position DUAL

Compare ER100S with alternatives

Compare 1SS307TE85R with alternatives