EM6A8160TSC-5G vs AS4C4M16D1A-5TAN feature comparison

EM6A8160TSC-5G Etron Technology Inc

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AS4C4M16D1A-5TAN Alliance Memory Inc

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer ETRON TECHNOLOGY INC ALLIANCE MEMORY INC
Package Description TSOP2, TSOP2,
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.7 ns 0.7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G66 R-PDSO-G66
Length 22.22 mm 22.22 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type DDR DRAM DDR1 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 66 66
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16 4MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.65 mm 0.65 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm 10.16 mm
Base Number Matches 1 1
Factory Lead Time 20 Weeks
Samacsys Manufacturer Alliance Memory
Moisture Sensitivity Level 4
Screening Level AEC-Q100

Compare EM6A8160TSC-5G with alternatives

Compare AS4C4M16D1A-5TAN with alternatives