EM6A8160BKC-4H
vs
M13S64164A-5BG2Y
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Contact Manufacturer
|
Contact Manufacturer
|
Ihs Manufacturer |
ETRON TECHNOLOGY INC
|
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
|
Package Description |
TBGA,
|
TFBGA,
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.02
|
8542.32.00.02
|
Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
Access Time-Max |
0.7 ns
|
0.7 ns
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
R-PBGA-B60
|
R-PBGA-B60
|
Length |
13 mm
|
13 mm
|
Memory Density |
67108864 bit
|
67108864 bit
|
Memory IC Type |
DDR DRAM
|
DDR DRAM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
60
|
60
|
Number of Words |
4194304 words
|
4194304 words
|
Number of Words Code |
4000000
|
4000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
4MX16
|
4MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TBGA
|
TFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, THIN PROFILE
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Width |
8 mm
|
8 mm
|
Base Number Matches |
1
|
1
|
|
|
|
Compare EM6A8160BKC-4H with alternatives
Compare M13S64164A-5BG2Y with alternatives