EGP50D
vs
EGP50DHE3/73
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
VISHAY SEMICONDUCTORS
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
EFFICIENCY
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.95 V
0.95 V
JEDEC-95 Code
DO-27
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
150 A
150 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
5 A
5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
10
1
Pbfree Code
Rohs Code
Pin Count
2
Additional Feature
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
JESD-609 Code
e3
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Compare EGP50D with alternatives
Compare EGP50DHE3/73 with alternatives