EGP30J
vs
EGP30J-AP
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
MICRO COMMERCIAL COMPONENTS CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
EFFICIENCY
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.7 V
JEDEC-95 Code
DO-27
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
600 V
600 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.075 µs
0.075 µs
Reverse Test Voltage
600 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
13
1
Rohs Code
Yes
Part Package Code
DO-201AD
Package Description
ROHS COMPLIANT, PLASTIC PACKAGE-2
Pin Count
2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Compare EGP30J with alternatives
Compare EGP30J-AP with alternatives