EGP30G-E3/73
vs
RGP30GZ
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
VISHAY SEMICONDUCTORS
GALAXY SEMI-CONDUCTOR CO LTD
Package Description
O-PALF-W2
O-PALF-W2
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
Application
EFFICIENCY
FAST RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
1.3 V
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
125 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Recovery Time-Max
0.05 µs
0.15 µs
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
JEDEC-95 Code
DO-27
Peak Reflow Temperature (Cel)
260
Reverse Current-Max
5 µA
Compare EGP30G-E3/73 with alternatives
Compare RGP30GZ with alternatives