EGP30G vs EGP31G-E3/C feature comparison

EGP30G Galaxy Microelectronics

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EGP31G-E3/C Vishay Intertechnologies

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Part Life Cycle Code Active Not Recommended
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY INTERTECHNOLOGY INC
Part Package Code DO-27
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JEDEC-95 Code DO-27 DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 5 µA 5 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Reverse Test Voltage 400 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 19 1
Rohs Code Yes
Factory Lead Time 8 Weeks
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
JESD-609 Code e3
Terminal Finish MATTE TIN

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Compare EGP31G-E3/C with alternatives