EGP30G vs EGP30G/51 feature comparison

EGP30G Galaxy Microelectronics

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EGP30G/51 Vishay Semiconductors

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY SEMICONDUCTORS
Part Package Code DO-27
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code DO-27
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Reverse Test Voltage 400 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 19 1
Rohs Code No
Package Description O-PALF-W2
Pin Count 2
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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