EGP30C vs FE6B feature comparison

EGP30C Galaxy Microelectronics

Buy Now Datasheet

FE6B Elite Semiconductor Products Inc

Buy Now Datasheet
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD ELITE SEMICONDUCTOR PRODUCTS INC
Part Package Code DO-27
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 0.975 V
JEDEC-95 Code DO-27
JESD-30 Code O-PALF-W2 E-LALF-W2
Non-rep Pk Forward Current-Max 125 A 135 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 3 A 6 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ELLIPTICAL
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 150 V 100 V
Reverse Current-Max 5 µA 5 µA
Reverse Recovery Time-Max 0.05 µs 0.035 µs
Reverse Test Voltage 150 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 11 5
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Additional Feature LOW LEAKAGE CURRENT

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