EGP30AHE3/54 vs EGP30AZ feature comparison

EGP30AHE3/54 Vishay Semiconductors

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EGP30AZ Galaxy Microelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer VISHAY SEMICONDUCTORS CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 0.95 V
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
JEDEC-95 Code DO-27
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 5 µA

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