EGP30A(Z)
vs
RGP30A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
O-PALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Application
EFFICIENCY
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.95 V
1.3 V
JEDEC-95 Code
DO-27
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
260
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.05 µs
0.15 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
21
Moisture Sensitivity Level
1
Compare EGP30A(Z) with alternatives
Compare RGP30A with alternatives