EF8A60F-H
vs
UGF8JT-E3/45
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
FORMOSA MICROSEMI CO LTD
VISHAY SEMICONDUCTORS
Package Description
R-PSFM-T2
R-PSFM-T2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY
Application
EFFICIENCY
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.75 V
1.75 V
JEDEC-95 Code
TO-220AC
TO-220AC
JESD-30 Code
R-PSFM-T2
R-PSFM-T2
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
8 A
8 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Rep Pk Reverse Voltage-Max
600 V
600 V
Reverse Current-Max
5 µA
30 µA
Reverse Recovery Time-Max
0.025 µs
0.05 µs
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
2
Pbfree Code
Rohs Code
Part Package Code
TO-220AC
Pin Count
3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Reverse Test Voltage
480 V
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
40
Compare EF8A60F-H with alternatives
Compare UGF8JT-E3/45 with alternatives