EDS2532CABJ-75L-E
vs
K4M563233E-EG1H0
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ELPIDA MEMORY INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
TFBGA, BGA90,9X15,32
LFBGA,
Pin Count
90
90
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.24
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
5.4 ns
7 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B90
R-PBGA-B90
JESD-609 Code
e1
Length
13 mm
13 mm
Memory Density
268435456 bit
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
SYNCHRONOUS DRAM
Memory Width
32
32
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
90
90
Number of Words
8388608 words
8388608 words
Number of Words Code
8000000
8000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
85 °C
Operating Temperature-Min
-25 °C
Organization
8MX32
8MX32
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
LFBGA
Package Equivalence Code
BGA90,9X15,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, LOW PROFILE, FINE PITCH
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.14 mm
1.4 mm
Self Refresh
YES
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.002 A
Supply Current-Max
0.265 mA
Supply Voltage-Max (Vsup)
2.7 V
3.6 V
Supply Voltage-Min (Vsup)
2.3 V
2.7 V
Supply Voltage-Nom (Vsup)
2.5 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
OTHER
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Width
8 mm
11 mm
Base Number Matches
1
1
Compare EDS2532CABJ-75L-E with alternatives
Compare K4M563233E-EG1H0 with alternatives