EDI8M8512C100C6B vs DPS512S8N-10B feature comparison

EDI8M8512C100C6B Electronic Designs Inc

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DPS512S8N-10B Twilight Technology Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ELECTRONIC DESIGNS INC TWILIGHT TECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 100 ns 100 ns
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-T32 R-CDMA-T32
JESD-609 Code e0
Memory Density 4194304 bit 4194304 bit
Memory IC Type SRAM MODULE SRAM MODULE
Memory Width 8 8
Number of Functions 1 1
Number of Ports 1
Number of Terminals 32 32
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 512KX8 512KX8
Output Characteristics 3-STATE 3-STATE
Output Enable YES
Package Body Material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
Package Code DIP DIP
Package Equivalence Code DIP32,.6 DIP32,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Screening Level MIL-STD-883 Class B (Modified) 38535Q/M;38534H;883B
Standby Current-Max 0.01 A 0.00027 A
Standby Voltage-Min 4.5 V 2 V
Supply Current-Max 0.13 mA 0.12 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code No
Part Package Code MODULE
Package Description DIP, DIP32,.6
Pin Count 32
Length 40.64 mm
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15.24 mm

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