EDI8L24512V20AI
vs
EDI8L24512V15AI
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ELECTRONIC DESIGNS INC
|
ELECTRONIC DESIGNS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| Access Time-Max |
20 ns
|
15 ns
|
| I/O Type |
COMMON
|
COMMON
|
| JESD-30 Code |
S-PQCC-J68
|
S-PQCC-J68
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
12582912 bit
|
12582912 bit
|
| Memory IC Type |
SRAM MODULE
|
SRAM MODULE
|
| Memory Width |
24
|
24
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
68
|
68
|
| Number of Words |
524288 words
|
524288 words
|
| Number of Words Code |
512000
|
512000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
512KX24
|
512KX24
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
QCCJ
|
QCCJ
|
| Package Equivalence Code |
LDCC68,1.0SQ
|
LDCC68,1.0SQ
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Standby Current-Max |
0.03 A
|
0.03 A
|
| Standby Voltage-Min |
3.14 V
|
3.14 V
|
| Supply Current-Max |
0.48 mA
|
0.54 mA
|
| Supply Voltage-Max (Vsup) |
3.465 V
|
3.465 V
|
| Supply Voltage-Min (Vsup) |
3.135 V
|
3.135 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
J BEND
|
J BEND
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
QUAD
|
QUAD
|
| Base Number Matches |
2
|
2
|
|
|
|
Compare EDI8L24512V20AI with alternatives
Compare EDI8L24512V15AI with alternatives