EDI88512LP55CB
vs
EDI8M8512C55C6B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ELECTRONIC DESIGNS INC
WHITE ELECTRONIC DESIGNS CORP
Reach Compliance Code
unknown
unknown
ECCN Code
3A001.A.2.C
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
55 ns
55 ns
I/O Type
COMMON
COMMON
JESD-30 Code
R-CDIP-T32
R-XDIP-T32
Memory Density
4194304 bit
4194304 bit
Memory IC Type
STANDARD SRAM
SRAM MODULE
Memory Width
8
8
Number of Functions
1
Number of Ports
1
Number of Terminals
32
32
Number of Words
524288 words
524288 words
Number of Words Code
512000
512000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
512KX8
512KX8
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC
Package Code
DIP
DIP
Package Equivalence Code
DIP32,.6
DIP32,.6
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Screening Level
38535Q/M;38534H;883B
MIL-STD-883 Class B (Modified)
Standby Current-Max
0.000185 A
0.02 A
Standby Voltage-Min
2 V
4.5 V
Supply Current-Max
0.075 mA
0.21 mA
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
JESD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
Compare EDI88512LP55CB with alternatives