EDI88512C85CM vs WS512K8-85CIE feature comparison

EDI88512C85CM White Electronic Designs Corp

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WS512K8-85CIE White Electronic Designs Corp

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Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer WHITE ELECTRONIC DESIGNS CORP WHITE ELECTRONIC DESIGNS CORP
Package Description 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Reach Compliance Code unknown unknown
ECCN Code 3A001.A.2.C
HTS Code 8542.32.00.41
Access Time-Max 85 ns 85 ns
I/O Type COMMON COMMON
JESD-30 Code R-CDIP-T32 R-CDMA-T32
Length 40.64 mm
Memory Density 4194304 bit 4194304 bit
Memory IC Type STANDARD SRAM SRAM MODULE
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 85 °C
Operating Temperature-Min -55 °C -40 °C
Organization 512KX8 512KX8
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Code DIP DIP
Package Equivalence Code DIP32,.6 DIP32,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 3.937 mm
Standby Current-Max 0.000185 A 0.0016 A
Standby Voltage-Min 2 V 2 V
Supply Current-Max 0.075 mA 0.08 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY INDUSTRIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15.24 mm
Base Number Matches 5 4
JESD-609 Code e0
Terminal Finish TIN LEAD