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EDI8834CA45EB vs HM1E-65756M-9 feature comparison

EDI8834CA45EB Electronic Designs Inc

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HM1E-65756M-9 Matra MHS

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ELECTRONIC DESIGNS INC MATRA MHS
Reach Compliance Code unknown unknown
Access Time-Max 45 ns 45 ns
I/O Type COMMON
JESD-30 Code R-GDIP-T28 R-GDIP-T28
JESD-609 Code e0
Memory Density 262144 bit 262144 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 28 28
Number of Words 32768 words 32768 words
Number of Words Code 32000 32000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 85 °C
Operating Temperature-Min -55 °C -40 °C
Organization 32KX8 32KX8
Output Characteristics 3-STATE 3-STATE
Output Enable YES YES
Package Body Material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Equivalence Code DIP28,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Screening Level 38535Q/M;38534H;883B
Standby Voltage-Min 4.5 V
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description ,
ECCN Code EAR99
HTS Code 8542.32.00.41
Memory » SRAMs
Memory » SRAMs

Compare EDI8834CA45EB with alternatives

Compare HM1E-65756M-9 with alternatives