EDI8833LP35CC vs EDI8833P35CB feature comparison

EDI8833LP35CC Electronic Designs Inc

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EDI8833P35CB Electronic Designs Inc

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ELECTRONIC DESIGNS INC ELECTRONIC DESIGNS INC
Reach Compliance Code unknown unknown
Access Time-Max 35 ns 35 ns
JESD-30 Code R-CDIP-T28 R-CDIP-T28
Memory Density 262144 bit 262144 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 28 28
Number of Words 32768 words 32768 words
Number of Words Code 32000 32000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 32KX8 32KX8
Output Characteristics 3-STATE 3-STATE
Output Enable YES YES
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Voltage-Min 2 V 4.5 V
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code No
I/O Type COMMON
JESD-609 Code e0
Package Code DIP
Package Equivalence Code DIP28,.6
Screening Level 38535Q/M;38534H;883B
Standby Current-Max 0.0009 A
Supply Current-Max 0.125 mA
Terminal Finish TIN LEAD
Terminal Pitch 2.54 mm

Compare EDI8833LP35CC with alternatives

Compare EDI8833P35CB with alternatives