EDI88130CS55CC
vs
EDI88130CS55CI
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ELECTRONIC DESIGNS INC
|
ELECTRONIC DESIGNS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| Access Time-Max |
55 ns
|
55 ns
|
| Additional Feature |
BATTERY BACKUP OPERATION
|
BATTERY BACKUP OPERATION
|
| I/O Type |
COMMON
|
COMMON
|
| JESD-30 Code |
R-CDIP-T32
|
R-CDIP-T32
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
1048576 bit
|
1048576 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
131072 words
|
131072 words
|
| Number of Words Code |
128000
|
128000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
128KX8
|
128KX8
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Output Enable |
YES
|
YES
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP32,.6
|
DIP32,.6
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Standby Current-Max |
0.01 A
|
0.01 A
|
| Standby Voltage-Min |
4.5 V
|
4.5 V
|
| Supply Current-Max |
0.2 mA
|
0.2 mA
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
5
|
5
|
|
|
|
Compare EDI88130CS55CC with alternatives
Compare EDI88130CS55CI with alternatives