EDI88130CS55CC vs K6T1008C2E-DL55 feature comparison

EDI88130CS55CC Electronic Designs Inc

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K6T1008C2E-DL55 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ELECTRONIC DESIGNS INC SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
Access Time-Max 55 ns 55 ns
Additional Feature BATTERY BACKUP OPERATION
I/O Type COMMON COMMON
JESD-30 Code R-CDIP-T32 R-PDIP-T32
JESD-609 Code e0
Memory Density 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Ports 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128KX8 128KX8
Output Characteristics 3-STATE 3-STATE
Output Enable YES
Package Body Material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP32,.6 DIP32,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.01 A
Standby Voltage-Min 4.5 V 2 V
Supply Current-Max 0.2 mA 0.05 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 2
Part Package Code DIP
Package Description DIP, DIP32,.6
Pin Count 32
ECCN Code EAR99
HTS Code 8542.32.00.41
Length 41.91 mm
Moisture Sensitivity Level 1
Seated Height-Max 5.08 mm
Width 15.24 mm

Compare EDI88130CS55CC with alternatives

Compare K6T1008C2E-DL55 with alternatives