EDI88128LPS55TB
vs
EDI88128CS55TI
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
MICROSEMI CORP
Part Package Code
DIP
DIP
Package Description
0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
Pin Count
32
32
Reach Compliance Code
unknown
unknown
ECCN Code
3A001.A.2.C
EAR99
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
55 ns
55 ns
I/O Type
COMMON
JESD-30 Code
R-CDIP-T32
R-CDIP-T32
Length
40.64 mm
40.64 mm
Memory Density
1048576 bit
1048576 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
32
32
Number of Words
131072 words
131072 words
Number of Words Code
128000
128000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
85 °C
Operating Temperature-Min
-55 °C
-40 °C
Organization
128KX8
128KX8
Output Characteristics
3-STATE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Equivalence Code
DIP32,.4
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Screening Level
MIL-STD-883
Seated Height-Max
3.937 mm
3.937 mm
Standby Current-Max
0.002 A
Standby Voltage-Min
2 V
Supply Current-Max
0.2 mA
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
INDUSTRIAL
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Width
10.16 mm
10.16 mm
Base Number Matches
1
1
Compare EDI88128LPS55TB with alternatives
Compare EDI88128CS55TI with alternatives