EDH816H64C35C9B
vs
MS1664BCXHI-35
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ELECTRONIC DESIGNS INC
MOSAIC SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Access Time-Max
35 ns
35 ns
Additional Feature
CONFIGURABLE AS 64K X 16
CONFIGURABLE AS 64K X 16
Alternate Memory Width
4
4
JESD-30 Code
R-XDMA-T40
R-XDMA-T40
Memory Density
1048576 bit
1048576 bit
Memory IC Type
SRAM MODULE
SRAM MODULE
Memory Width
8
8
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
40
40
Number of Words
131072 words
131072 words
Number of Words Code
128000
128000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
85 °C
Operating Temperature-Min
-55 °C
-40 °C
Organization
128KX8
128KX8
Output Characteristics
3-STATE
Output Enable
NO
NO
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
BICMOS
Temperature Grade
MILITARY
INDUSTRIAL
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Package Description
,
ECCN Code
EAR99
HTS Code
8542.32.00.41
Compare EDH816H64C35C9B with alternatives
Compare MS1664BCXHI-35 with alternatives