EDF1DS
vs
CBR1F-D020SBK
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY SEMICONDUCTORS
CENTRAL SEMICONDUCTOR CORP
Package Description
R-PDSO-G4
R-PDSO-G4
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
200 V
200 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.3 V
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
4
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
200 V
200 V
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
6
1
Pbfree Code
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Reverse Current-Max
0.00001 µA
Reverse Recovery Time-Max
0.2 µs
Terminal Finish
TIN LEAD
Compare EDF1DS with alternatives
Compare CBR1F-D020SBK with alternatives