EDE5116AHSE-6E-E vs HYB18T512160BF-3 feature comparison

EDE5116AHSE-6E-E Elpida Memory Inc

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HYB18T512160BF-3 Infineon Technologies AG

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Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ELPIDA MEMORY INC INFINEON TECHNOLOGIES AG
Part Package Code BGA BGA
Package Description TFBGA, BGA84,9X15,32 TFBGA,
Pin Count 84 84
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.45 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
JESD-609 Code e1
Length 12.5 mm 12.5 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR2 DRAM DDR DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 32MX16 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 4,8
Standby Current-Max 0.01 A
Supply Current-Max 0.24 mA
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 10 mm 10 mm
Base Number Matches 1 4

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