EBE51UD8ABFA-4C-E vs M378B6573EZ0-CG8 feature comparison

EBE51UD8ABFA-4C-E Micron Technology Inc

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M378B6573EZ0-CG8 Samsung Semiconductor

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Package Description DIMM, DIMM244,24 DIMM, DIMM240,40
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.6 ns
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PDMA-N244 R-XDMA-N240
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type DDR DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 64 64
Number of Terminals 244 240
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Temperature-Max 85 °C 95 °C
Operating Temperature-Min
Organization 64MX64 64MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM244,24 DIMM240,40
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Standby Current-Max 0.064 A
Supply Current-Max 2.4 mA
Supply Voltage-Nom (Vsup) 1.8 V 1.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm 1 mm
Terminal Position DUAL DUAL
Base Number Matches 2 1
Part Package Code DIMM
Pin Count 240
Access Mode SINGLE BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Self Refresh YES
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V

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