EBD11UD8ADDA-6B
vs
M470L2923DV0-CB3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ELPIDA MEMORY INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
MODULE
MODULE
Package Description
DIMM, DIMM200,24
DIMM, DIMM200,24
Pin Count
200
200
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.36
Access Mode
DUAL BANK PAGE BURST
DUAL BANK PAGE BURST
Access Time-Max
0.7 ns
0.7 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
167 MHz
166 MHz
I/O Type
COMMON
COMMON
JESD-30 Code
R-XDMA-N200
R-XDMA-N200
JESD-609 Code
e0
Memory Density
8589934592 bit
8589934592 bit
Memory IC Type
DDR DRAM MODULE
DDR DRAM MODULE
Memory Width
64
64
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
200
200
Number of Words
134217728 words
134217728 words
Number of Words Code
128000000
128000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
128MX64
128MX64
Output Characteristics
3-STATE
3-STATE
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Code
DIMM
DIMM
Package Equivalence Code
DIMM200,24
DIMM200,24
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Self Refresh
YES
YES
Standby Current-Max
0.048 A
0.08 A
Supply Current-Max
4.6 mA
3.24 mA
Supply Voltage-Max (Vsup)
2.7 V
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
2.5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
NO LEAD
NO LEAD
Terminal Pitch
0.6 mm
0.6 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Compare EBD11UD8ADDA-6B with alternatives
Compare M470L2923DV0-CB3 with alternatives