DTC143EETR vs RN1101 feature comparison

DTC143EETR ROHM Semiconductor

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RN1101 Toshiba America Electronic Components

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Pbfree Code Yes No
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Case Connection COLLECTOR
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 20
JESD-30 Code R-PDSO-G3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 26
Pin Count 3
Samacsys Manufacturer Toshiba

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