DTC114YE vs PDTC114YMB feature comparison

DTC114YE ROHM Semiconductor

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PDTC114YMB Nexperia

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD NEXPERIA
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7
Collector Current-Max (IC) 0.07 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 100
JESD-30 Code R-PDSO-G3 R-PBCC-N3
JESD-609 Code e1 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.15 W
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) TIN
Terminal Form GULL WING NO LEAD
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 10 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 230 MHz
Base Number Matches 8 2
Package Description CHIP CARRIER, R-PBCC-N3
Date Of Intro 2017-02-01
Case Connection COLLECTOR
Moisture Sensitivity Level 1
Reference Standard AEC-Q101; IEC-60134

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