DTC114TUAFRAT106
vs
DTC114EUA
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Not Recommended
Active
Ihs Manufacturer
ROHM CO LTD
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Samacsys Manufacturer
ROHM Semiconductor
Additional Feature
BUILT IN BIAS RESISTOR
BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
100
30
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.2 W
Power Dissipation-Max (Abs)
0.2 W
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
Base Number Matches
1
10
JESD-609 Code
e3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Terminal Finish
Matte Tin (Sn)
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