DTC114TU3T106 vs DTC114YXV3T1 feature comparison

DTC114TU3T106 ROHM Semiconductor

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DTC114YXV3T1 onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROHM CO LTD ON SEMICONDUCTOR
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 2018-04-23
Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 80
JESD-30 Code R-PDSO-G3 R-PDSO-F3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.2 W 0.3 W
Surface Mount YES YES
Terminal Finish Tin (Sn) TIN
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 1
Part Package Code SC-89
Package Description SMALL OUTLINE, R-PDSO-F3
Pin Count 3
Manufacturer Package Code CASE 463C-03
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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