DTC114T-AN3-R vs PDTC114YM,315 feature comparison

DTC114T-AN3-R Unisonic Technologies Co Ltd

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PDTC114YM,315 NXP Semiconductors

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Part Life Cycle Code Active Transferred
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD NXP SEMICONDUCTORS
Part Package Code SOT DFN
Package Description SMALL OUTLINE, R-PDSO-G3 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
Pin Count 3 3
Manufacturer Package Code SOT523-1 SOT883
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 100
JESD-30 Code R-PDSO-G3 R-PBCC-N3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD TIN
Terminal Form GULL WING NO LEAD
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 2
Rohs Code Yes
Case Connection COLLECTOR
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.25 W
Time@Peak Reflow Temperature-Max (s) 30

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Compare PDTC114YM,315 with alternatives