DTC114T-AN3-R
vs
PDTC114YM,315
feature comparison
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
UNISONIC TECHNOLOGIES CO LTD
|
NXP SEMICONDUCTORS
|
Part Package Code |
SOT
|
DFN
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
SOT523-1
|
SOT883
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
BUILT-IN BIAS RESISTOR
|
BUILT-IN BIAS RESISTOR RATIO IS 4.7
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
50 V
|
50 V
|
Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE) |
100
|
100
|
JESD-30 Code |
R-PDSO-G3
|
R-PBCC-N3
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Polarity/Channel Type |
NPN
|
NPN
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN
|
Terminal Form |
GULL WING
|
NO LEAD
|
Terminal Position |
DUAL
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
250 MHz
|
|
Base Number Matches |
1
|
2
|
Rohs Code |
|
Yes
|
Case Connection |
|
COLLECTOR
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation-Max (Abs) |
|
0.25 W
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare DTC114T-AN3-R with alternatives
Compare PDTC114YM,315 with alternatives