DTC114EKAFRAT146 vs DTC114TU3T106 feature comparison

DTC114EKAFRAT146 ROHM Semiconductor

Buy Now Datasheet

DTC114TU3T106 ROHM Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 100
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W 0.2 W
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Date Of Intro 2018-04-23
Samacsys Manufacturer ROHM Semiconductor
JESD-609 Code e3
Operating Temperature-Max 150 °C
Terminal Finish Tin (Sn)
VCEsat-Max 0.3 V

Compare DTC114EKAFRAT146 with alternatives

Compare DTC114TU3T106 with alternatives