DTC114ECA
vs
DTC114ESA-C
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
SECOS CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT IN BIAS RESISTANCE RATIO IS 1
|
BUILT IN BIAS RESISTANCE RATIO IS 1
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.2 W
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
250 MHz
|
250 MHz
|
| Base Number Matches |
1
|
1
|
| JEDEC-95 Code |
|
TO-92
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
Compare DTC114ECA with alternatives
Compare DTC114ESA-C with alternatives