DTA124XET1 vs RN2108 feature comparison

DTA124XET1 Motorola Semiconductor Products

Buy Now Datasheet

RN2108 Toshiba America Electronic Components

Buy Now Datasheet
Part Life Cycle Code Transferred Active
Ihs Manufacturer MOTOROLA INC TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO 2.1364 BUILT-IN BIAS RESISTOR RATIO IS 2.14
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-G3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type PNP NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Pbfree Code No
Rohs Code Yes
Pin Count 3
Samacsys Manufacturer Toshiba
Collector-Base Capacitance-Max 6 pF
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 0.1 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V

Compare RN2108 with alternatives