DTA123YUAFRAT106
vs
DTA123YUAT107
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Not Recommended
Active
Ihs Manufacturer
ROHM CO LTD
ROHM CO LTD
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
ROHM Semiconductor
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 4.5
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
33
33
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
PNP
PNP
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
Base Number Matches
1
1
Pbfree Code
Yes
JESD-609 Code
e1
Operating Temperature-Max
150 °C
Qualification Status
Not Qualified
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
VCEsat-Max
0.3 V
Compare DTA123YUAFRAT106 with alternatives
Compare DTA123YUAT107 with alternatives