DTA123YUAFRAT106 vs DTA123YUAT107 feature comparison

DTA123YUAFRAT106 ROHM Semiconductor

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DTA123YUAT107 ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.5 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 33 33
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP PNP
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Pbfree Code Yes
JESD-609 Code e1
Operating Temperature-Max 150 °C
Qualification Status Not Qualified
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
VCEsat-Max 0.3 V

Compare DTA123YUAFRAT106 with alternatives

Compare DTA123YUAT107 with alternatives