DTA123JUBHZGTL vs DTA123JUAT106 feature comparison

DTA123JUBHZGTL ROHM Semiconductor

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DTA123JUAT106 ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Not Recommended
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 2016-08-01
Samacsys Manufacturer ROHM Semiconductor ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21 BUILT-IN BIAS RESISTOR RATIO IS 21
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-F3 R-PDSO-G3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP PNP
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 2
Pbfree Code Yes
Part Package Code SC-70
Pin Count 3
JESD-609 Code e1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
VCEsat-Max 0.3 V

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Compare DTA123JUAT106 with alternatives