DTA123JUBHZGTL
vs
DTA123JUA-T106
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Not Recommended
Not Recommended
Ihs Manufacturer
ROHM CO LTD
ROHM CO LTD
Package Description
SMALL OUTLINE, R-PDSO-F3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Date Of Intro
2016-08-01
Samacsys Manufacturer
ROHM Semiconductor
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 21
BUILT-IN BIAS RESISTOR RATIO IS 21
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
80
JESD-30 Code
R-PDSO-F3
R-PDSO-G3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
PNP
PNP
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Form
FLAT
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
Base Number Matches
1
2
JESD-609 Code
e1
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
0.2 W
Qualification Status
Not Qualified
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
VCEsat-Max
0.3 V
Compare DTA123JUBHZGTL with alternatives
Compare DTA123JUA-T106 with alternatives