DTA114ESA
vs
RN2401(TE85R2)
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TOSHIBA CORP
Package Description
,
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Taiwan Semiconductor
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
5
1
Pin Count
3
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
PNP
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
200 MHz
Compare DTA114ESA with alternatives
Compare RN2401(TE85R2) with alternatives