DTA114ESA
vs
RN2117FV
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
|
TOSHIBA CORP
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
SMALL OUTLINE, R-PDSO-F3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT IN BIAS RESISTANCE RATIO IS 1
|
BUILT-IN BIAS RESISTANCE RATIO IS 0.47
|
| Collector Current-Max (IC) |
0.05 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JESD-30 Code |
O-PBCY-T3
|
R-PDSO-F3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.3 W
|
0.15 W
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
FLAT
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
250 MHz
|
200 MHz
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
3
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare DTA114ESA with alternatives
Compare RN2117FV with alternatives