DS2012R-65
vs
DS2012RN
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
DALLAS SEMICONDUCTOR
|
DALLAS SEMICONDUCTOR
|
| Reach Compliance Code |
unknown
|
unknown
|
| Access Time-Max |
65 ns
|
120 ns
|
| Additional Feature |
RETRANSMIT
|
|
| Clock Frequency-Max (fCLK) |
12.5 MHz
|
7.14 MHz
|
| Cycle Time |
80 ns
|
|
| JESD-30 Code |
S-PQCC-J32
|
R-PQCC-J32
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
36864 bit
|
36864 bit
|
| Memory IC Type |
OTHER FIFO
|
OTHER FIFO
|
| Memory Width |
9
|
9
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
4096 words
|
4096 words
|
| Number of Words Code |
4000
|
4000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
4KX9
|
4KX9
|
| Output Characteristics |
3-STATE
|
|
| Output Enable |
NO
|
NO
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
QCCJ
|
QCCJ
|
| Package Equivalence Code |
LDCC32,.5X.6
|
LDCC32,.5X.6
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Standby Current-Max |
0.002 A
|
0.002 A
|
| Supply Current-Max |
0.12 mA
|
0.12 mA
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
J BEND
|
J BEND
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
QUAD
|
QUAD
|
| Base Number Matches |
1
|
2
|
|
|
|
Compare DS2012R-65 with alternatives
Compare DS2012RN with alternatives