DR1000 vs HER108S feature comparison

DR1000 EDI Diodes (Electronic Devices Inc)

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HER108S Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer ELECTRONIC DEVICES INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDIP-W2 O-PALF-W2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.80
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 18 V 1.7 V
JESD-30 Code R-PDIP-W2 O-PALF-W2
JESD-609 Code e4
Non-rep Pk Forward Current-Max 3 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 0.025 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style IN-LINE LONG FORM
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 12000 V 1000 V
Reverse Recovery Time-Max 0.15 µs 0.075 µs
Surface Mount NO NO
Technology AVALANCHE
Terminal Finish SILVER PURE TIN
Terminal Form WIRE WIRE
Terminal Position DUAL AXIAL
Base Number Matches 1 22
Rohs Code Yes
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY
Case Connection ISOLATED
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260

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