DR1000 vs 1SS352TPHR2 feature comparison

DR1000 EDI Diodes (Electronic Devices Inc)

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1SS352TPHR2 Toshiba America Electronic Components

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer ELECTRONIC DEVICES INC TOSHIBA CORP
Package Description R-PDIP-W2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 18 V 1.2 V
JESD-30 Code R-PDIP-W2 R-PDSO-G2
JESD-609 Code e4
Non-rep Pk Forward Current-Max 3 A 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.025 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 12000 V 85 V
Reverse Recovery Time-Max 0.15 µs 0.004 µs
Surface Mount NO YES
Technology AVALANCHE
Terminal Finish SILVER
Terminal Form WIRE GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Application FAST RECOVERY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.2 W
Reference Standard AEC-Q101
Reverse Current-Max 0.5 µA
Reverse Test Voltage 80 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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