DQ47F512-200 vs DQ48F512-200 feature comparison

DQ47F512-200 LSI Corporation

Buy Now Datasheet

DQ48F512-200 LSI Corporation

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEEQ TECHNOLOGY INC SEEQ TECHNOLOGY INC
Package Description DIP, DIP32,.6 DIP, DIP32,.6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 200 ns 200 ns
Additional Feature 100 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS 100 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS
Command User Interface NO NO
Data Polling NO NO
Data Retention Time-Min 10 10
JESD-30 Code R-GDIP-T32 R-GDIP-T32
JESD-609 Code e0 e0
Memory Density 524288 bit 524288 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 65536 words 65536 words
Number of Words Code 64000 64000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 64KX8 64KX8
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Equivalence Code DIP32,.6 DIP32,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 12 V 12 V
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.005 A 0.0001 A
Supply Current-Max 0.04 mA 0.04 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Toggle Bit NO NO
Type NOR TYPE NOR TYPE
Base Number Matches 1 1
Endurance 100 Write/Erase Cycles
Number of Sectors/Size 128
Sector Size 512

Compare DQ47F512-200 with alternatives

Compare DQ48F512-200 with alternatives