DPS256S8N-12C vs DPS256S8N-12M feature comparison

DPS256S8N-12C B&B Electronics Manufacturing Company

Buy Now Datasheet

DPS256S8N-12M B&B Electronics Manufacturing Company

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer DPAC TECHNOLOGIES CORP DPAC TECHNOLOGIES CORP
Package Description DIP, DIP32,.6 DIP, DIP32,.6
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.A 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 120 ns 120 ns
I/O Type COMMON COMMON
JESD-30 Code R-CDMA-T32 R-CDMA-T32
JESD-609 Code e0 e0
Memory Density 2097152 bit 2097152 bit
Memory IC Type SRAM MODULE SRAM MODULE
Memory Width 8 8
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 32 32
Number of Words 262144 words 262144 words
Number of Words Code 256000 256000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 256KX8 256KX8
Output Characteristics 3-STATE 3-STATE
Output Enable YES YES
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Code DIP DIP
Package Equivalence Code DIP32,.6 DIP32,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.00009 A 0.00009 A
Standby Voltage-Min 2 V 2 V
Supply Current-Max 0.11 mA 0.11 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 2 2

Compare DPS256S8N-12C with alternatives

Compare DPS256S8N-12M with alternatives