DN2540N5-G
vs
DN2540N3P017
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SUPERTEX INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Factory Lead Time
5 Weeks, 4 Days
Samacsys Manufacturer
Microchip
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
0.5 A
0.17 A
Drain-source On Resistance-Max
25 Ω
25 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
5 pF
JEDEC-95 Code
TO-220AB
TO-92
JESD-30 Code
R-PSFM-T3
O-PBCY-T3
JESD-609 Code
e3
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
DEPLETION MODE
DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
FLANGE MOUNT
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
15 W
Pulsed Drain Current-Max (IDM)
0.5 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
35 ns
Turn-on Time-Max (ton)
25 ns
Base Number Matches
1
1
Package Description
CYLINDRICAL, O-PBCY-T3
Additional Feature
LOW THRESHOLD
Power Dissipation Ambient-Max
1 W
Compare DN2540N5-G with alternatives
Compare DN2540N3P017 with alternatives