DN2540N5-G vs DN2540N3P017 feature comparison

DN2540N5-G Microchip Technology Inc

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DN2540N3P017 Supertex Inc

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SUPERTEX INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Factory Lead Time 5 Weeks, 4 Days
Samacsys Manufacturer Microchip
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V 400 V
Drain Current-Max (ID) 0.5 A 0.17 A
Drain-source On Resistance-Max 25 Ω 25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 5 pF
JEDEC-95 Code TO-220AB TO-92
JESD-30 Code R-PSFM-T3 O-PBCY-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode DEPLETION MODE DEPLETION MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style FLANGE MOUNT CYLINDRICAL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 15 W
Pulsed Drain Current-Max (IDM) 0.5 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 35 ns
Turn-on Time-Max (ton) 25 ns
Base Number Matches 1 1
Package Description CYLINDRICAL, O-PBCY-T3
Additional Feature LOW THRESHOLD
Power Dissipation Ambient-Max 1 W

Compare DN2540N5-G with alternatives

Compare DN2540N3P017 with alternatives