DN2535N3P013
vs
DN2535N3-GP014
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
SUPERTEX INC
|
MICROCHIP TECHNOLOGY INC
|
Package Description |
CYLINDRICAL, O-PBCY-T3
|
CYLINDRICAL, O-PBCY-T3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
LOW THRESHOLD
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
350 V
|
|
Drain Current-Max (ID) |
0.17 A
|
0.12 A
|
Drain-source On Resistance-Max |
25 Ω
|
25 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
5 pF
|
5 pF
|
JEDEC-95 Code |
TO-92
|
TO-92
|
JESD-30 Code |
O-PBCY-T3
|
O-PBCY-T3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
1 W
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
|
|
|
Compare DN2535N3P013 with alternatives
Compare DN2535N3-GP014 with alternatives