DMT6005LCT
vs
SQM120N06-06-GE3
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
End Of Life
|
Ihs Manufacturer |
DIODES INC
|
VISHAY SILICONIX
|
Package Description |
TO-220, 3 PIN
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
12 Weeks
|
|
Date Of Intro |
2016-10-07
|
|
Samacsys Manufacturer |
Diodes Incorporated
|
|
Additional Feature |
HIGH RELIABILITY
|
|
Avalanche Energy Rating (Eas) |
43.5 mJ
|
211 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
100 A
|
120 A
|
Drain-source On Resistance-Max |
0.006 Ω
|
0.006 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-263AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
130 A
|
480 A
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
D2PAK
|
Pin Count |
|
4
|
Operating Temperature-Max |
|
175 °C
|
Qualification Status |
|
Not Qualified
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare DMT6005LCT with alternatives
Compare SQM120N06-06-GE3 with alternatives